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  rev.1.00 nov 10, 2004 page 1 of 5 HRV103B silicon schottky barrier diode for rectifying rej03g0399-0100 rev.1.00 nov 10, 2004 features ? low reverse current and suitable for high efficiency rectifying. ? thin ultra small resin package (tur p) is suitable for high density surf ace mounting and high speed assembly. ordering information type no. laser mark package code HRV103B s2 turp pin arrangement cathode mark mark 12 s2 1. cathode 2. anode
HRV103B rev.1.00 nov 10, 2004 page 2 of 5 absolute maximum ratings (ta = 25 c) item symbol value unit repetitive peak reverse voltage v rrm 30 v reverse voltage v r 30 v average rectified current i o * 2 1 a non-repetitive peak forward surge current i fsm * 1 5 a junction temperature tj 150 c storage temperature tstg ? 55 to +150 c notes: 1. 10ms sine wave 1 pulse 2. ta = 48 c, with ceramics board (board size: 50mm 50 mm, land size 2mm 2 mm) short form wave ( 180 c), v r = 15v. electrical characteristics (ta = 25 c) item symbol min typ max unit test condition v f1 ? ? 0.35 i f = 100 ma v f2 ? ? 0.45 i f = 700 ma forward voltage v f3 ? ? 0.50 v i f = 1a i r1 ? ? 10 v r = 5 v reverse current i r2 ? ? 100 a v r = 30 v capacitance c ? ? 40 pf v r = 10 v, f = 1 mhz ? 100 ? ceramics board * 1 thermal resistance rth(j-a) ? 200 ? c/w glass epoxy board * 2 notes: 1. ceramics board 1.0 50h 50w 0.8t unit: mm 2.0 0.3 0.5 2.0 2.0 2. glass epoxy board 1.0 50h 50w 0.8t unit: mm 6.0 0.5 6.0 0.3 2.0 3. turp is the structure which radi ates heat to a substrate, please perfo rm mounting to a substrate by reflow.
HRV103B rev.1.00 nov 10, 2004 page 3 of 5 main characteristics 0 0.2 0.4 0.6 0.8 1.0 010203040 pulse test forward voltage v f (v) fig.1 forward current vs. forward voltage forward current i f (a) reverse current i r (a) reverse voltage v r (v) fig.2 reverse current vs. reverse voltage pulse test 1.0 10 10 1.0 0.1 100 f=1mhz pulse test reverse voltage v r (v) fig.3 capacitance vs. reverse voltage capacitance c (pf) ta = 75 c ta = 25 c ta = 25 c ta = 75 c 10 ?3 10 ?2 10 ?5 10 ?4 1.0 10 ?6 10 ?1 10 ?3 10 ?5 10 ?4 10 ?7 10 ?6 10 ?2
HRV103B rev.1.00 nov 10, 2004 page 4 of 5 75 100 25 50 0125 1.2 1.0 0.8 0.6 0 0.4 0.2 -25 d=1/2 d=1/6 sin( =180 ) d=1/3 dc average rectified current i o (a) ambient temperature ta ( c ) fig.6 average rectified current vs. ambient temperature v r = v rrm /2 tj = 150 c rth(j-a) = 100 c/w 3.0 2.5 1.5 1.0 0.5 40 30 20 10 0 0 4.0 d=1/2 d=1/3 d=5/6 2.0 3.5 sin( =180 ) t t 0v tj = 125 c d = ? t t fig.5 reverse power dissipation vs. reverse voltage reverse voltage v r (v) reverse power dissipation pd (w) forward current i f (a) fig.4 forward power dissipation vs. forward current forward power dissipation pd (w) 150 1.5 1.0 0 0.5 0 0.1 0.4 0.6 0.8 0.7 t t 0a d = ? t t tj = 25 c d=1/6 d=1/3 d=1/2 0.2 0.3 0.5 sin( =180 ) dc
HRV103B rev.1.00 nov 10, 2004 page 5 of 5 package dimensions package code jedec jeita mass (reference value) turp ? ? 0.004 g 1.90 0.1 2.50 0.10 0.60 0.05 1.25 0.55 max 0.13 0.05 unit: mm 0.80 0.05 + 0.20 ? 0.10
keep safety first in your circuit designs! 1. renesas technology corp. puts the maximum effort into making semiconductor products better and more reliable, but there is al ways the possibility that trouble may occur with them. trouble with semiconductors may lead to personal injury, fire or property damage. remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. notes regarding these materials 1. these materials are intended as a reference to assist our customers in the selection of the renesas technology corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to renesas t echnology corp. or a third party. 2. renesas technology corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating i n the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. all information contained in these materials, including product data, diagrams, charts, programs and algorithms represents in formation on products at the time of publication of these materials, and are subject to change by renesas technology corp. without notice due to product improvement s or other reasons. it is therefore recommended that customers contact renesas technology corp. or an authorized renesas technology corp. product distrib utor for the latest product information before purchasing a product listed herein. the information described here may contain technical inaccuracies or typographical errors. renesas technology corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or e rrors. please also pay attention to information published by renesas technology corp. by various means, including the renesas technolo gy corp. semiconductor home page (http://www.renesas.com). 4. when using any or all of the information contained in these materials, including product data, diagrams, charts, programs, an d algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. renesas technology corp. assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. renesas technology corp. semiconductors are not designed or manufactured for use in a device or system that is used under cir cumstances in which human life is potentially at stake. please contact renesas technology corp. or an authorized renesas technology corp. product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerosp ace, nuclear, or undersea repeater use. 6. the prior written approval of renesas technology corp. is necessary to reprint or reproduce in whole or in part these materia ls. 7. if these products or technologies are subject to the japanese export control restrictions, they must be exported under a lice nse from the japanese government and cannot be imported into a country other than the approved destination. any diversion or reexport contrary to the export control laws and regulations of japan and/or the country of destination is pro hibited. 8. please contact renesas technology corp. for further details on these materials or the products contained therein. sales strategic planning div. nippon bldg., 2-6-2, ohte-machi, chiyoda-ku, tokyo 100-0004, japan http://www.renesas.com refer to " http://www.renesas.com/en/network " for the latest and detailed information. renesas technology america, inc. 450 holger way, san jose, ca 95134-1368, u.s.a tel: <1> (408) 382-7500, fax: <1> (408) 382-7501 renesas technology europe limited dukes meadow, millboard road, bourne end, buckinghamshire, sl8 5fh, u.k. tel: <44> (1628) 585-100, fax: <44> (1628) 585-900 renesas technology hong kong ltd. 7th floor, north tower, world finance centre, harbour city, 1 canton road, tsimshatsui, kowloon, hong kong tel: <852> 2265-6688, fax: <852> 2730-6071 renesas technology taiwan co., ltd. 10th floor, no.99, fushing north road, taipei, taiwan tel: <886> (2) 2715-2888, fax: <886> (2) 2713-2999 renesas technology (shanghai) co., ltd. unit2607 ruijing building, no.205 maoming road (s), shanghai 200020, china tel: <86> (21) 6472-1001, fax: <86> (21) 6415-2952 renesas technology singapore pte. ltd. 1 harbour front avenue, #06-10, keppel bay tower, singapore 098632 tel: <65> 6213-0200, fax: <65> 6278-8001 renesas sales offices ? 200 4. re nesas technology corp ., all rights reser v ed. printed in ja pan. colophon .2.0


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